N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. Low gate charge\nVery low on-resistance\nHigh avalanche ruggedness;

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意法半导体

丝印：360N4F6；Package：H2PAK-2；N-channel 40 V, 180 A STripFET??VI DeepGATE?? Power MOSFET in H짼PAK-2 package

文件：359.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

TO-263

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上传：深圳市佳斯泰科技有限公司

BGA

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上传：深圳市凯睿晟科技有限公司

BGA

ST/意法

上传：芯灿微（深圳）科技有限公司