isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.29 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：360N4F6；Package：I2PAK；N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAK and TO-220 packages

文件：183.16 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 40 V, 1.46 mOhm typ., 120 A STripFET F6 Power MOSFET in I2PAK package

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Designed for automotive applications and AEC-Q101 qualified\nVery low on-resistance\nLow gate charge\nHigh avalanche ruggedness\nLow gate drive power loss;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.13 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAK and TO-220 packages

文件：183.16 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体