N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：453.59 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：453.59 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Switching applications

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficie

文件：433.62 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体