丝印：40N65M2；Package：TO-247；Switching applications

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficie

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.087 Ohm典型值、32 A MDmesh M2功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 650 V, 0.087 廓 typ., 32 A MDmesh??M2 Power MOSFET in a TO-220FP package

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 99mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Extremely low gate charge

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STMICROELECTRONICS

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