丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 360mΩ (Max) • 100 avalanche tested • Low input capacitance and gate charge • Minimum Lot-to-Lot variations for robust device performance and relia

文件：334.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，I2PAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 500V 13A I2PAK

ONSEMI

安森美半导体