STI45N10F7

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on

STI45N10F7

Marking：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

STL45N10F7AG

N-ChannelEnhancementModeFieldEffectTransistor

Features LowRDS(on)&FOM Extremelylowswitchingloss ExcellentstabilityanduniformityorInvertors Applications Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC Synchronous-rectificationapplication

STL45N10F7AG

Automotive-gradeN-channel100V,20mΩtyp.,18A,STripFET™F7PowerMOSFETinaPowerFLAT™5x6package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofm

STP45N10F7

N-Channel100-V(D-S)MOSFET

STP45N10F7

N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on

STP45N10F7

IscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤18mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications