丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=22A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 148mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

文件：358.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27883 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27883 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：436.85 Kbytes 页数：2 Pages

ISC

无锡固电