N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，I2PAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

文件：1.09215 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：873.82 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.125Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

文件：1.09215 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体