N-channel 100 V, 7.8 m廓 typ., 120 A STripFET?줚II Power MOSFET in TO-220FP, I짼PAKFP, H짼PAK-2 and TO-220 packages

Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. Features ■ Ultra low on-resistance ■ 100 avala

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STMICROELECTRONICS

意法半导体

N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.\n • Ultra low on-resistance• 100% avalanche tested;

ST

意法半导体

TO-263

ST

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TO-263

TOS

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H2PAK

ST/意法

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