丝印：10NM60N；Package：I2PAK；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package

Features • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET

文件：702.04 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.92 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10775 Mbytes 页数：10 Pages

VBSEMI

微碧半导体