Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.92 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：10NM60N；Package：TO-220；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10775 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

丝印：10NM60ND；Package：TO-22；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

文件：1.2278 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：300.89 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.10772 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N沟道600 V、0.53 Ohm典型值、10 A MDmesh II功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.57 Ohm, 8 A, TO-220 FDmesh(TM) II Power MOSFET

These FDmesh™ II Power MOSFETs with fast-recovery body diode are produced using MDmesh™ II technology. Utilizing a new strip-layout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Fast-recovery body diode\nLow gate charge and input capacitance\nLow on-resistance R\nDS(on)\n100% avalanche tested\nHigh dv/dt ruggedness;

ST

意法半导体