丝印：NCE30H29D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =290A RDS(ON)

文件：421.22 Kbytes 页数：7 Pages

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丝印：NCE30H33LL；Package：TOLL；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H33LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

文件：647.56 Kbytes 页数：7 Pages

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丝印：NCE30ND35Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30ND35Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON)

文件：656.45 Kbytes 页数：7 Pages

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丝印：NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON)

文件：474.86 Kbytes 页数：11 Pages

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丝印：30NP1812G；Package：DFN5X6-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON)

文件：932.92 Kbytes 页数：10 Pages

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丝印：NCE30NP1812K；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =30V,ID =18A RDS(ON)

文件：385.33 Kbytes 页数：10 Pages

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丝印：NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON)

文件：443.08 Kbytes 页数：10 Pages

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丝印：30NP4030G；Package：DFN5X6-8L；NCE N&P-Channel complementary Power MOSFET

Description The NCE30NP4030G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 40A ● VDS = -30V,ID =- 30A RDS(ON)

文件：418.85 Kbytes 页数：11 Pages

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丝印：NCE30P06J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -30V,ID = -6.5A RDS(ON

文件：269.51 Kbytes 页数：6 Pages

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丝印：NCE30P10S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P10S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON)

文件：282.38 Kbytes 页数：7 Pages

NCEPOWER

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