丝印：NCE30H10BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H10BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON)

文件：685.84 Kbytes 页数：7 Pages

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丝印：NCE30H11BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga

文件：637.1 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30H11BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi

文件：610.37 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30H11K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)

文件：631.87 Kbytes 页数：7 Pages

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丝印：NCE30H12AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H12AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON)

文件：726.18 Kbytes 页数：7 Pages

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丝印：NCE30H14K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON)

文件：602.43 Kbytes 页数：7 Pages

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丝印：NCE30H15B；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON)

文件：728.07 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30H15BG；Package：PDFN5X6-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features

文件：759.59 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30H15BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H15BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON)

文件：698.36 Kbytes 页数：7 Pages

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丝印：NCE30H28；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H28 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V ,ID =280A RDS(ON)

文件：699.57 Kbytes 页数：7 Pages

NCEPOWER

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