NCE30H11BG芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30H11BG	文件：637.1 Kbytes Page：7 Pages	丝印：NCE30H11BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga 文件：637.1 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30H11BG	文件：637.1 Kbytes Page：7 Pages	丝印：NCE30H11BG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga 文件：637.1 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30H11BG供应商更新时间2025-9-21 13:02:00