NCE4606C芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE4606C	文件：1.12682 Mbytes Page：10 Pages	丝印：NCE4606C；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON) 文件：1.12682 Mbytes 页数：10 Pages	NCEPOWER 新洁能	NCEPOWER
NCE4606C	文件：1.12682 Mbytes Page：10 Pages	丝印：NCE4606C；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON) 文件：1.12682 Mbytes 页数：10 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE4606C供应商更新时间2025-10-31 11:00:00