丝印：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：583.74 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：568.42 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：662.38 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：583.74 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：568.42 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)

文件：662.38 Kbytes 页数：7 Pages

NCEPOWER

新洁能

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.36 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：333.47 Kbytes 页数：2 Pages

ISC

无锡固电