NCE60P65K芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE60P65K	文件：643.3 Kbytes Page：7 Pages	丝印：NCE60P65K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P65K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-65A RDS(ON) 文件：643.3 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
LCE60P65K	文件：1.14559 Mbytes Page：6 Pages	丝印：NCE60P65K；Package：TO-252-2L；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.14559 Mbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
LMAK65P06	文件：1.31416 Mbytes Page：6 Pages	丝印：NCE60P65K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET 文件：1.31416 Mbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
NCE60P65K	文件：643.3 Kbytes Page：7 Pages	丝印：NCE60P65K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P65K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-65A RDS(ON) 文件：643.3 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE60P65K供应商更新时间2025-9-21 13:34:00