丝印：NCE60P82A；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：316.92 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AD；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：329.82 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AF；Package：TO-220F-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application ● Load switch General Features ● VDS =-60V,ID =-41A RDS(ON)

文件：670.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：385.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82A；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：316.92 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AD；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：329.82 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AF；Package：TO-220F-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application ● Load switch General Features ● VDS =-60V,ID =-41A RDS(ON)

文件：670.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE60P82AK；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P82AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-82A RDS(ON)

文件：385.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能