丝印：NCE6525Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =65V,ID =25A RDS(ON)

文件：309.72 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6525Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =65V,ID =25A RDS(ON)

文件：309.72 Kbytes 页数：7 Pages

NCEPOWER

新洁能