NCE6525Q中文资料无锡新洁能股份数据手册PDF规格书

厂商型号	NCE6525Q
功能描述	NCE N-Channel Enhancement Mode Power MOSFET
丝印标识	NCE6525Q
封装外壳	DFN3.3X3.3-8L
文件大小	309.72 Kbytes
页面数量	7 页
生产厂商	Wuxi NCE Power Semiconductor Co., Ltd
企业简称	NCEPOWER【无锡新洁能股份】
中文名称	无锡新洁能股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-21 8:31:00
人工找货	NCE6525Q价格和库存，欢迎联系客服免费人工找货

Description

The NCE6525Q uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =65V,ID =25A

RDS(ON) <20mΩ @ VGS=10V

RDS(ON) <25mΩ @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply