丝印：NCE6525Q；Package：DFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6525Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =65V,ID =25A RDS(ON)

文件：309.72 Kbytes 页数：7 Pages

NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE6525Q uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =25A\nR DS(ON) <20m? @ V GS =10V\nR DS(ON) <25m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

NCEPower

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Small, portable digital I/O device / Eight channel-to-channel optically isolated inputs

文件：669 Kbytes 页数：5 Pages

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Red Pin-Point LED Chip

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8-A 5-V/3.3-V Input Adjustable ISR with Short-Circuit protection

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TI

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