丝印：NCE6080A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

文件：592.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

文件：762.33 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

文件：605.32 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6080AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

文件：805.82 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6080A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

文件：592.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

文件：762.33 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

文件：605.32 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6080AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

文件：805.82 Kbytes 页数：7 Pages

NCEPOWER

新洁能