NCE6080AI芯片代码Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE6080AI	文件：762.33 Kbytes Page：8 Pages	丝印：NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：762.33 Kbytes 页数：8 Pages	NCEPOWER 新洁能	NCEPOWER
NCE6080AI	文件：762.33 Kbytes Page：8 Pages	丝印：NCE6080AI；Package：TO-251-3L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c 文件：762.33 Kbytes 页数：8 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE6080AI供应商更新时间2025-9-21 13:02:00