NCE6080AK芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE6080AK	文件：605.32 Kbytes Page：7 Pages	丝印：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件：605.32 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER
NCE6080AK	文件：605.32 Kbytes Page：7 Pages	丝印：NCE6080AK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell 文件：605.32 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER

更多NCE6080AK供应商更新时间2025-8-13 13:02:00