NCE6080ED芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE6080ED	文件：602.21 Kbytes Page：7 Pages	丝印：NCE6080ED；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：602.21 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER
NCE6080ED	文件：602.21 Kbytes Page：7 Pages	丝印：NCE6080ED；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) 文件：602.21 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司	NCEPOWER

更多NCE6080ED供应商更新时间2025-8-13 9:01:00