NCE4801芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE4801	文件：326.19 Kbytes Page：7 Pages	丝印：NCE4801；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -5A RDS(ON) 文件：326.19 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
LCE4801	文件：1.05153 Mbytes Page：6 Pages	丝印：NCE4801；Package：SOP-8；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.05153 Mbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
LM4801	文件：1.06585 Mbytes Page：6 Pages	丝印：NCE4801；Package：SOP-8；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.06585 Mbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
NCE4801	文件：326.19 Kbytes Page：7 Pages	丝印：NCE4801；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -5A RDS(ON) 文件：326.19 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE4801供应商更新时间2026-10-23 13:38:00