丝印：NCE6020A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：692.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：754.99 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：678.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AQ；Package：DFN3.3X3.-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

文件：716.17 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AK；Package：TO-252-2L；LCE P-Channel Enhancement Mode Power MOSFET

文件：1.26605 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6020AK；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：1.43551 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE6020A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：692.65 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：754.99 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

文件：678.45 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6020AQ；Package：DFN3.3X3.-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

文件：716.17 Kbytes 页数：7 Pages

NCEPOWER

新洁能