丝印：NCE6020A；Package：TO-251；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

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12-200V N-Channel Trench MOSFET

\n The NCE6020AI uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =20A\nR DS(ON) <35m? @ V GS =10V\nR DS(ON) <40m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

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NCE N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

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NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

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