丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

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NCEPOWER

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12-200V N-Channel Trench MOSFET

\n The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• VDS =60V,ID =20A\nRDS(ON) <35mΩ @ VGS=10V\nRDS(ON) <40mΩ @ VGS=4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dissipation\n• Special process technology for;

NCEPower

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NCE N-Channel Enhancement Mode Power MOSFET

Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

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NCEPOWER

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NCE N-Channel Enhancement Mode Power MOSFET

文件：449.46 Kbytes 页数：7 Pages

NCEPOWER

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N-Channel 60 V (D-S) MOSFET

文件：960.08 Kbytes 页数：7 Pages

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