丝印：NCE6020AL；Package：TO-251S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. \n• VDS =60V,ID =20A\nRDS(ON) <35mΩ @ VGS=10V\nRDS(ON) <40mΩ @ VGS=4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dissipation\n• Special process technology for;

NCEPower

新洁能

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

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NTE

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

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TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR