NCE30H11BK芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30H11BK	文件：610.37 Kbytes Page：7 Pages	丝印：NCE30H11BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi 文件：610.37 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30H11BK	文件：610.37 Kbytes Page：7 Pages	丝印：NCE30H11BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi 文件：610.37 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30H11BK供应商更新时间2025-9-16 18:30:00