NCE30P40K芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30P40K	文件：734.47 Kbytes Page：7 Pages	丝印：NCE30P40K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -40A RDS(ON) =7.8mΩ @ VGS= -10V (Typ) RDS(ON) =11.5mΩ @ VGS= -4.5V (Ty 文件：734.47 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30P40K	文件：734.47 Kbytes Page：7 Pages	丝印：NCE30P40K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -30V,ID = -40A RDS(ON) =7.8mΩ @ VGS= -10V (Typ) RDS(ON) =11.5mΩ @ VGS= -4.5V (Ty 文件：734.47 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30P40K供应商更新时间2025-9-21 13:02:00