NCE30TD65BD芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30TD65BD	文件：1.16792 Mbytes Page：8 Pages	丝印：NCE30TD65BD；Package：TO-263；650V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat) 文件：1.16792 Mbytes 页数：8 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30TD65BD	文件：1.16792 Mbytes Page：8 Pages	丝印：NCE30TD65BD；Package：TO-263；650V, 30A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat) 文件：1.16792 Mbytes 页数：8 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30TD65BD供应商更新时间2025-9-16 9:18:00