NCE4555K芯片代码Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE4555K	文件：627.86 Kbytes Page：7 Pages	丝印：NCE4555K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =55A RDS(ON) =9.2mΩ @ VGS=10V (Typ) RDS(ON) =13mΩ @ VGS=4.5V (Typ) ● High density cell 文件：627.86 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE4555K	文件：627.86 Kbytes Page：7 Pages	丝印：NCE4555K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4555K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =55A RDS(ON) =9.2mΩ @ VGS=10V (Typ) RDS(ON) =13mΩ @ VGS=4.5V (Typ) ● High density cell 文件：627.86 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE4555K供应商更新时间2025-9-13 13:01:00