零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NCE6080 | Marking:NCE6080;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | |
Marking:NCE6080A;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080AI;Package:TO-251-3L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080AT;Package:TO-247;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080D;Package:TO-263-2L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080ED;Package:TO-263-2L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
Marking:NCE6080EK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER |
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