丝印：NCE4606B；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON)

文件：403.06 Kbytes 页数：10 Pages

NCEPOWER

新洁能

丝印：NCE4606B；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON)

文件：403.06 Kbytes 页数：10 Pages

NCEPOWER

新洁能