NCE30P12BS芯片代码丝印对应型号-114ic电子网

丝印	下载订购	功能描述	制造商上传企业	LOGO
NCE30P12BS	文件：714.95 Kbytes Page：7 Pages	型号：NCE30P12BS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) 文件：714.95 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司
NCE30P12BS	文件：714.95 Kbytes Page：7 Pages	型号：NCE30P12BS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) 文件：714.95 Kbytes 页数：7 Pages	NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司

更多NCE30P12BS供应商更新时间2025-8-5 10:35:00