NCE30NP07S芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30NP07S	文件：474.86 Kbytes Page：11 Pages	丝印：NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) 文件：474.86 Kbytes 页数：11 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30NP07S	文件：474.86 Kbytes Page：11 Pages	丝印：NCE30NP07S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) 文件：474.86 Kbytes 页数：11 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30NP07S供应商更新时间2025-9-13 10:05:00