NCE30NP1812Q芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30NP1812Q	文件：443.08 Kbytes Page：10 Pages	丝印：NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON) 文件：443.08 Kbytes 页数：10 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30NP1812Q	文件：443.08 Kbytes Page：10 Pages	丝印：NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel ● VDS = 30V,ID = 18A ● VDS = -30V,ID =- 12A RDS(ON) 文件：443.08 Kbytes 页数：10 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30NP1812Q供应商更新时间2025-9-16 18:30:00