NCE30H11BK数据表ic资料供应商报价新洁能-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NCE30H11BK	文件：610.37 Kbytes Page：7 Pages	丝印：NCE30H11BK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi 文件：610.37 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30H11BK	文件：300 bytes Page：1 Pages	12-200V N-Channel Trench MOSFET	NCEPower 新洁能	NCEPower
NCE30H11G	文件：377.15 Kbytes Page：7 Pages	N-Channel Enhancement Mode Power MOSFET 文件：377.15 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE30H11K	文件：631.87 Kbytes Page：7 Pages	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) 文件：631.87 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE30H11BK供应商更新时间2026-1-17 8:01:00