NCE30H11G

Marking：NCE30H11G；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

NCE30H11BG

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11BGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.3mΩ(typical)@VGS=10V RDS(ON)=3.8mΩ(typical)@VGS=4.5V ●Excellentga

NCE30H11BK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11BKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)=2.7mΩ(typical)@VGS=10V RDS(ON)=3.9mΩ(typical)@VGS=4.5V ●Highdensi

NCE30H11K

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE30H11Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=30V,ID=110A RDS(ON)