12-200V N-Channel Trench MOSFET

The NCE30H11G uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. • V DS =30V,I D =110AR DS(ON) <2.4 m? @ V GS =10VR DS(ON) <3.0m? @ V GS =4.5V• High density cell design for ultra low Rdson• Fully characterized avalanche voltage and current• Good stability and uniformity with high E AS• Excellent package for good heat dissipation• Special process technology for hi;

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丝印：NCE30H11G；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.8mΩ (typical) @ VGS=4.5V ● Excellent ga

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =110A RDS(ON) =2.7mΩ (typical) @ VGS=10V RDS(ON) =3.9mΩ (typical) @ VGS=4.5V ● High densi

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