CIT SWITCH

文件：252.92 Kbytes 页数：3 Pages

CIT

丝印：3008N；Package：SOT23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON)

文件：338.9 Kbytes 页数：7 Pages

NCEPOWER

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丝印：3008XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3008XM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 8A RDS(ON)

文件：636.1 Kbytes 页数：8 Pages

NCEPOWER

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丝印：3008Y；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =8A RDS(ON)

文件：313.36 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE3009S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3009S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =9A RDS(ON)

文件：325 Kbytes 页数：7 Pages

NCEPOWER

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丝印：3013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3013J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =13A RDS(ON)

文件：313.28 Kbytes 页数：8 Pages

NCEPOWER

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丝印：NCE3015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =15A RDS(ON)

文件：301.11 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE3030Q；Package：PDFN3.3X3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3030Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Pow

文件：745.85 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE3040Q；Package：DFN3.3x3.3-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3040Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

文件：637.84 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE3045G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification

文件：659.57 Kbytes 页数：7 Pages

NCEPOWER

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