丝印：NCE30P12BS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P12BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON)

文件：714.95 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P15AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A RDS(ON)

文件：347.95 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P16Q；Package：DFN3.3X3.3；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P16Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -16A RDS(ON)

文件：306 Kbytes 页数：6 Pages

NCEPOWER

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丝印：NCE30P20Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -20A RDS(ON)

文件：679.1 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P25BQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25BQ uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Application ● PWM applications ● Load switch ● Power management General Features ● VDS = -30V,ID = -25A RDS(O

文件：740.37 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P25Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -25A RDS(ON)

文件：687.05 Kbytes 页数：9 Pages

NCEPOWER

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丝印：NCE30P28Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ●Power management ●Load switch General Features ● VDS = -30V,ID = -28A RDS(ON)

文件：744.19 Kbytes 页数：8 Pages

NCEPOWER

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丝印：NCE30P30G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON)

文件：363.33 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

文件：426.32 Kbytes 页数：7 Pages

NCEPOWER

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丝印：NCE30P30L；Package：TO-25IS；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

文件：340.01 Kbytes 页数：7 Pages

NCEPOWER

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