丝印：NCE30P30G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON)

文件：363.33 Kbytes 页数：7 Pages

NCEPOWER

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12-150V P-Channel Trench MOSFET

The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. • VDS = -30V,ID = -30ARDS(ON) < 10mΩ @ VGS=-10VRDS(ON) < 15mΩ @ VGS=-4.5V• High power and current handing capability• Lead free product is acquired• Surface mount package;

NCEPower

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NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

文件：426.32 Kbytes 页数：7 Pages

NCEPOWER

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P-Channel 30-V (D-S) MOSFET

文件：1.02365 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE30P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-30V,ID =-30A RDS(ON)

文件：340.01 Kbytes 页数：7 Pages

NCEPOWER

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