丝印：NCE30TD60BT；Package：TO-247；600V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.03206 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE30TD65BD；Package：TO-263；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.16792 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：NCE30TD65BP；Package：TO-3P；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.03579 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE30TD65BT；Package：TO-247；650V, 30A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.03515 Mbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE30TH60BP；Package：TO-3PNT；600V, 30A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat） ⚫

文件：672.26 Kbytes 页数：8 Pages

NCEPOWER

新洁能

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：483.24 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：3400E；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. General Features ● VDS = 30

文件：243.55 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：3400X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：303.47 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：3400XY；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：283.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：495.17 Kbytes 页数：9 Pages

VBSEMI

微碧半导体