丝印：3400X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：303.47 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：3400XY；Package：SOT23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

文件：283.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能