丝印：3407；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

Product Summary VDs= -30V, ID= -4.1A RDS(ON)

文件：1.89348 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：3407；Package：SOT-23；Plastic-Encapsulate MOSFETS

General Description The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：183.53 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3407；Package：SOT-23；Plastic-Encapsulate MOSFETS

General Description -CAR for automotive and other applications requiring unique site and AEC-Q101 qualified and PPAP capable. The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：244.91 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：3407；Package：SOT-23；P-Channel Super Enhancement Mode MOSFET

General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management

文件：1.6335 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3407；Package：SOT-23；P-Channel Super Enhancement Mode MOSFET

General Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching Applications Battery protection Load switch Power management

文件：1.6335 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3407；Package：SOT-23；P-Channel Enhancement Mode MOSFET

Feature Advanced trench cell design Low Thermal Resistance Low Gate Charge Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：5.18054 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：3407；Package：SOT-23-3；P-Channel MOSFET uses advanced trench technology

文件：1.25778 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：3407；Package：SOT-23；30V P-Channel Enhancement-Mode MOSFET

文件：1.17365 Mbytes 页数：6 Pages

FS

丝印：3407；Package：SOT-23；P-Channel Super Enhancement Mode MOSFET

文件：1.63342 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3407；Package：SOT-23-3L；P-Channel Enhancement Mode Field Effect Translstor

文件：1.13769 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子