丝印：3415Y；Package：SOT-23-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

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NCEPOWER

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