丝印：3415E；Package：SOT-23；MOSFET

Features - ESD protection up to 2kV(Human body mode). - Electrostatic sensitive devices. - AEC-Q101 Qualified. - Parallel use is easy. - High-speed switching. - Drive circuits can be simple.

文件：492.28 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：3415E；Package：SOT-23；Silicon P-Channel Power MOSFET

文件：1.76526 Mbytes 页数：6 Pages

PJSEMI

平晶半导体

丝印：3415EX；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

文件：247.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

9V P-channel MOS FET

文件：161.74 Kbytes 页数：2 Pages

FUMAN

富满微