丝印：3407E；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3407E uses advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications.It is ESD protected. General Features ● VDS = -30V,ID = -4.3A RDS(ON) = 28mΩ @ VGS=-10V (typ) RDS(ON) = 38mΩ @ VGS=-4.5V (typ) E

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NCEPOWER

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