AO3407

P-Channel Enhancement MOSFET

Features ●VDS(V)=-30V ●ID=-4.1A ●RDS(ON)52m(VGS=-10V) ●RDS(ON)87m(VGS=-4.5V)

AO3407

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=-30V ID=-4.1A RDS(ON)

AO3407

Plastic-Encapsulate Mosfets

P-ChannelMOSFET FEATURES •TheAO3407usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thisdeviceis suitableforuseasaloadswitchorinPWMapplications.

AO3407

P- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P-CHANNELMOSFETinaSOT-23PlasticPackage. Features VDS(V)=-30V ID=-4.1A RDS(ON)

AO3407

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

AO3407

Marking：3407；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

ProductSummary VDs=-30V,ID=-4.1A RDS(ON)

AO3407

Marking：A7***；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features VDS(V)=-30V ID=-4.1A RDS(ON)

AO3407

30V P-Channel Enhancement Mode MOSFET

30VP-ChannelEnhancementModeMOSFET VDS=-30V RDS(ON),Vgs@-10V,Ids@4.1A

AO3407

Marking：A7***；Package：SOT-23；30V P-Channel MOSFET

AO3407A

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3407A/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AO3407AandAO3407ALareelectricallyidentical. -RoHSCompliant -AO3407ALisHalogenFree Features