丝印：A7***；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V ID= -4.1 A RDS(ON)

文件：297.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A

文件：1.99218 Mbytes 页数：3 Pages

HTSEMI

金誉半导体

P-Channel Enhancement MOSFET

Features ● VDS (V) = -30V ● ID = -4.1 A ● RDS(ON) 52m (VGS = -10V) ● RDS(ON) 87m (VGS = -4.5V)

文件：1.56996 Mbytes 页数：4 Pages

KEXIN

科信电子

P- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions P- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = -30V ID = -4.1 A RDS(ON)

文件：968.43 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.04744 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

文件：390.37 Kbytes 页数：4 Pages

HOTTECH

合科泰

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V) = -30V I D = -4.1 A RDS(ON)

文件：705.6 Kbytes 页数：4 Pages

KERSEMI

丝印：3407；Package：SOT-23；P-Channel 20-V(D-S) MOSFET

Product Summary VDs= -30V, ID= -4.1A RDS(ON)

文件：1.89348 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：A7***；Package：SOT-23；30V P-Channel MOSFET

文件：453.5 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET

MTW

美台微